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developers of 3c-sic/si menu skip to content home about us the management team the board investors markets the benefits of 3c-sic in power systems case study – use of 3c-sic in hevs case study – use of 3c-sic in power factor correctors technology 3c-sic/si development products partners development partners supply chain partners news press releases anvil in the news contact us locations careers silicon carbide performance for the price of silicon # # # # advantages of sic in power electronics advantages of sic in leds 3c-sic material the technology delivering efficiency benefits in: photovoltaics motors uninterruptable power supplies hybrid electric vehicles power distribution consumer electronics power conversion anvil semiconductors is developing 3c-sic material and devices advantages of silicon carbide in power electronics silicon carbide devices enable: higher voltages sic can sustain much higher voltages (almost 10 times) compared to silicon. devices can be shrunk in size reducing the resistive losses fewer sic switches in series are required in high voltage applications reduces system complexity and cost whilst improving reliability higher currents sic can carry much higher currents (almost 5 times) compared to silicon. reduces the area of devices reduces the parasitic capacitance higher temperatures sic can operate up to 400°c compared to 150°c for silicon. reduces cooling costs and complexity higher thermal conductivity sic has a much higher thermal conductivity (roughly 3 times) compared to silicon. heat is conducted away much more effectively greatly reduces complexity of cooling systems significant reduction in cost and size faster switching power devices made from sic can switch roughly 10 times faster than those made from silicon. power conversion circuits operate faster much smaller energy storage capacitors and inductors smaller, cheaper and more efficient system higher energy band gap sic has a higher energy band gap than silicon. more robust (hardened) against disturbances such as heat, radiation or intense electromagnetic fields very useful in sensor and military applications advantages of cubic sic for leds using anvil semiconductors’ 3c-sic on silicon as a substrate for leds has the potential to deliver reduced cost enables use of silicon substrates overcomes the lattice and thermal expansion mismatches between gan and silicon allows use of larger wafers high efficiency reduced dislocation density reduces recombination and increases efficiency cubic gan reduces or eliminates internal fields so increasing efficiency high intensity light cubic gan increases efficiency and reduces droop – reduction in efficiency with higher current- so enabling high intensity leds warm white light cubic gan overcomes the “green gap” – significantly lower efficiency in the green wavelength. enables warm white light by colour mixing of efficient rgb leds increased efficiency for lcds and displays high efficiency across the full visible spectrum enables use in displays cubic gan enables production of polarised light for use in lcds negating need for polariser with high losses longer life reduced internal fields reduces failure modes higher efficiency reduces heat dissipation problems that cause system failures news sic hybrid power module lowers power conversion costs february 15, 2016 anvil semiconductor works with the manufacturing technology centre to develop a low cost silicon carbide hybrid power module using 3c-sic devices february 15, 2016 contact us if you are interested in finding out more about the devices anvil are developing, in receiving early development samples, or if you are interested in using 3c-sic devices or material please get in touch. email: [email protected], tel: 01223 655444. ©2014 anvil semiconductors

URL analysis for anvil-semi.co.uk

http://www.anvil-semi.co.uk/about-us/
http://www.anvil-semi.co.uk/category/anvil-in-the-news/
http://www.anvil-semi.co.uk/the-management-team/
http://www.anvil-semi.co.uk/mailto:[email protected]
http://www.anvil-semi.co.uk/technology/
http://www.anvil-semi.co.uk/benefits-of-3c-sic-power-systems/
http://www.anvil-semi.co.uk/find-out-more
http://www.anvil-semi.co.uk/3c-sicsi-development/
http://www.anvil-semi.co.uk/investors/
http://www.anvil-semi.co.uk/career-opportunities/
http://www.anvil-semi.co.uk/find-out-more/
http://www.anvil-semi.co.uk/#three
http://www.anvil-semi.co.uk/#content
http://www.anvil-semi.co.uk/technology/
http://www.anvil-semi.co.uk/anvil-semiconductor-works-manufacturing-technology-centre-develop-low-cost-silicon-carbide-hybrid-power-module-using-3c-sic-devices/

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the WHOIS query quota for 2600:3c03:0000:0000:f03c:91ff:feae:779d has been exceeded
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WHOIS lookup made at 22:52:00 01-Sep-2017

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SERVERS

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  ARGS anvil-semi.co.uk

  PORT 43

  TYPE domain

DISCLAIMER
This WHOIS information is provided for free by Nominet UK the central registry
for .uk domain names. This information and the .uk WHOIS are:
Copyright Nominet UK 1996 - 2017.
You may not access the .uk WHOIS or use any data from it except as permitted
by the terms of use available in full at http://www.nominet.uk/whoisterms,
which includes restrictions on: (A) use of the data for advertising, or its
repackaging, recompilation, redistribution or reuse (B) obscuring, removing
or hiding any or all of this notice and (C) exceeding query rate or volume
limits. The data is provided on an 'as-is' basis and may lag behind the
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